QP: Quadrant Photodiodes/Arrays
Silicon Sensor International AG Quadrant Photodiodes consist of an single chip with four active areas, separated by a small gap. These photodiodes are used in a wide range of applications such as position sensing of laser beams, autocollimators and other alignment applications.
Special Features
* Small GAP
* Low dark current
* High shunt resistance
* High resolution
* Special version for 1064nm
QP: Quadrant Photodiodes/Arrays仕様
| Order number | Type No. | Ele- ments* |
Active Area | Dark curr. (nA) |
Rise time (ns) |
Data sheet | ||
| Chip | Package | Size (mm) | Area (mm2) | 10 V | 850 nm | 10 V | 50 ohm |
|||
| 500139 | QP1-6 | TO5 | 4 | Φ 1.13 | 1 | 0,1* | 20 | QP1-6 TO5 |
| 500138 | QP10-6 | TO8S | 4 | Φ 3.57 | 10 | 0,5* | 20 | QP10-6 TO8S |
| 501016 | QP100-6 | LCC10S | 4 | Φ 11.2 | 100 | 5* | 50 | QP100-6 LCC10S |
| 500141 | QP2-6 | TO5 | 4 | Φ 1.6 | 2 | 0,1* | 20 | QP2-6 TO5 |
| 500140 | QP20-6 | TO8S | 4 | Φ 5.05 | 20 | 1* | 30 | QP20-6 TO8S |
| 500144 | QP5-6 | TO5 | 4 | Φ 2.52 | 5 | 0,2* | 20 | QP5-6 TO5 |
| 501254 | QP5.8-6 | TO5 | 4 | 2.4 x 2.4 | 5.8 | 0,4* | 20 | QP5.8-6 TO5 |
| 500142 | QP50-6 | TO8S | 4 | Φ 7.8 | 50 | 2* | 40 | QP50-6 TO8S |
*...仕様は予告無く変更することがあります。
*...仕様は予告無く変更することがあります。
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