Ionizing radiation detectors
Nuclear particles and X-rays can be detected with silicon either directly via absorption within the crystal lattice or indirectly via scintillators. For the absorption mode to be efficient requires a large absorptive volume. This capability is achieved by Silicon Sensor’s superior wafer fabrication processing that produces detectors that can be operated at bias voltages that produce fully depleted active regions but still maintain extremely low dark currents.
Special Features
* Wafer thickness up to 780 µm
* Very low dark signals
* Very low capacitances
* Smallest series resistance at full depletion
Ionizing radiation detectors仕様
| Order # |
Chip | Pack -age |
Active Area Size (mm) |
Area (mm2) |
Dark curr. (nA) |
Cap. (pF) |
Gamma energy (keV) |
Scint- illator CsI (TI) |
γ- window |
Data sheet |
|---|---|---|---|---|---|---|---|---|---|---|
| 501901 | X0.5-γ | TO8S | phi 0.8 | 0.5 | 0.005 | 0.2 | >1 | no | phi 6 mm |
- |
| 501902 | X1.8-γ | TO8S | phi1.5 | 1.8 | 0.01 | 0.5 | >1 | no | phi 6 mm |
- |
| 501903 | X5-γ | TO8S | phi 2.52 | 5 | 0.01 | 2.5 | >1 | no | phi 6 mm |
DL |
| 501904 | X10-γ | TO8S | phi 3.75 | 10 | 0.02 | 4.5 | >1 | no | phi 6 mm |
DL |
| 501900 | X10-γ | TO8S Sc | phi 3.75 | 10 | 0.02 | 4.5 | 2… >1000 |
yes | phi 6 mm |
DL |
| 501907 | X10-6 | TO39 | phi 3.57 | 10 | 0.5 | 18 | >5 | no | epoxy dome |
DL |
| 501401 | X100-7 | LCC10 | 10x10 | 100 | 5 | 80 | >5 | no | black epoxy |
DL |
| 501400 | X100-7 | CerPin | 10x10 | 100 | 5 | 80 | >5 | no | black epoxy |
DL |
*...仕様は予告無く変更することがあります。

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